{"id":15979,"date":"2025-11-27T18:13:23","date_gmt":"2025-11-27T12:43:23","guid":{"rendered":"https:\/\/johnsonfrancis.org\/techworld\/?p=15979"},"modified":"2025-11-27T18:13:24","modified_gmt":"2025-11-27T12:43:24","slug":"introducing-insulated-gate-bipolar-transistor-igbt","status":"publish","type":"post","link":"https:\/\/johnsonfrancis.org\/techworld\/introducing-insulated-gate-bipolar-transistor-igbt\/","title":{"rendered":"Introducing Insulated Gate Bipolar Transistor (IGBT)"},"content":{"rendered":"<iframe loading=\"lazy\" width=\"560\" height=\"315\" src=\"https:\/\/www.youtube.com\/embed\/T6gGH4dFEyw?si=kov7mSD14KTZs3VC\" title=\"YouTube video player\" frameborder=\"0\" allow=\"accelerometer; autoplay; clipboard-write; encrypted-media; gyroscope; picture-in-picture; web-share\" referrerpolicy=\"strict-origin-when-cross-origin\" allowfullscreen><\/iframe>\n\n<p class=\"wp-block-paragraph\">Insulated Gate Bipolar Transistor (IGBT) is a semiconductor device that acts as a high-efficiency electronic switch for high-power applications. It combines the fast switching of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with the high current and voltage handling of a Bipolar Junction Transistor (BJT). IGBT has high input impedance like a MOSFET and low conduction voltage drop like a BJT. A voltage applied to the insulated gate controls the current flow between the collector and emitter terminals. Thus it is a voltage controlled device. So the terminals are gate, collector and emitter. It has four alternating layers of N and P type semiconductor materials.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">IGBTs can handle high power and are designed for high-voltage, high-current applications like power inverters, motor drives and electric vehicles. They allow for high-speed switching making them ideal for applications like pulse width modulation (PWM). PWM is a method of representing a signal as a rectangular wave with varying duty cycle. It is useful for controlling the average power or amplitude delivered by an electrical signal. PWM is used in solar charge controllers. In PWM, average value of voltage and current fed to the load is controlled by switching the supply between 0 and 100% at a rate faster than it takes the load to change significantly. The longer the switch is on, the higher the total power supplied to the load.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">This is an IGBT which I bought from the local electronics spare shop. Specifications look quite impressive. It has a rated maximum power dissipation of 178W, maximum collector-emitter voltage of 600V, maximum gate-emitter voltage of 20V and maximum collector current of 60A at 25\u2103. There is provision for mounting it on an appropriate heat sink for high power dissipation, though I could not source it from the local shop. Anyway I am not going to use it for such high power applications. It has robust TO-247 package, suitable for through-hole mounting in circuits. I am planning to use it for a demo light dimmer with a 12V car indicator lamp. Actually it is designed for use in applications such as motor controls, inverters, switch-mode power supplies (SMPS), and induction cookers. It can offer high-speed switching, high ruggedness and temperature stable behaviour. Maximum rated junction temperature is 150 \u2103.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">There are different types of IGBTs like punch-through IGBT and non-punch-through IGBT. Former allows flow of current from collector to emitter only. They are used in direct current circuits and are also known as asymmetrical IGBT. Non-punch-through IGBT allows current flow in both ways from collector to emitter and back. They are used in alternating current circuits and are also called symmetric IGBT. Other types mentioned are Field Stop IGBT, Punch-through Non-Punch-through IGBT which is a hybrid type for switch mode power supplies, and Current Injected IGBT with reduced switching losses and suitable for resonant converters. Resonant converter uses resonant circuit of inductors and capacitors to achieve high efficiency and power density. They are designed to minimize switching losses. They are a popular choice for electric vehicle chargers, telecom power supplies and server power supplies.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Insulated Gate Bipolar Transistor (IGBT) is a semiconductor device that acts as a high-efficiency electronic switch for high-power applications. It combines the fast switching of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with the high current and voltage handling of a Bipolar Junction Transistor (BJT). IGBT has high input impedance like a MOSFET and low conduction voltage [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":15980,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7],"tags":[],"class_list":["post-15979","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-amateur-radio-ham-radio"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v28.0 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Introducing Insulated Gate Bipolar Transistor (IGBT) - Johnson&#039;s Techworld<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/johnsonfrancis.org\/techworld\/introducing-insulated-gate-bipolar-transistor-igbt\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Introducing Insulated Gate Bipolar Transistor (IGBT) - Johnson&#039;s Techworld\" \/>\n<meta property=\"og:description\" content=\"Insulated Gate Bipolar Transistor (IGBT) is a semiconductor device that acts as a high-efficiency electronic switch for high-power applications. 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